d0stcan
Üye
- Katılım
- 9 Haz 2007
- Mesajlar
- 410
- Puanları
- 6
Toshiba K80E08K3 TRANSİSTÖR Yerine hangi Transistörleri kullanabilirim?
Drain-source voltage VDSS 75 V
Drain-gate voltage (RGS = 20 kΩ)
VDGR 75 V Gate-source voltage
VGSS ± 20 V DC (Note 1) ID 80
Drain current Pulse (Note 1) IDP 320 A
Drain power dissipation (Tc = 25°C) PD 40 W
Single pulse avalanche energy (Note 2) EAS 443 mJ
Avalanche current IAR 80 A
Repetitive avalanche energy (Note 3) EAR 4 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Drain-source voltage VDSS 75 V
Drain-gate voltage (RGS = 20 kΩ)
VDGR 75 V Gate-source voltage
VGSS ± 20 V DC (Note 1) ID 80
Drain current Pulse (Note 1) IDP 320 A
Drain power dissipation (Tc = 25°C) PD 40 W
Single pulse avalanche energy (Note 2) EAS 443 mJ
Avalanche current IAR 80 A
Repetitive avalanche energy (Note 3) EAR 4 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
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